DMN2250UFB-7B parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Diodes

Model:

DMN2250UFB-7B

Description:

MOSFET N-CH 20V 1.35A 3DFN

Stock:

10161

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.01

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Parameters

Current at 25 ° C - continuous drain (Id)

1.35A(Ta)

Drain source voltage (Vdss)

20 V

Drive voltage (maximum RdsOn, minimum RdsOn)

1.8V,4.5V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

3.1 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

94 pF @ 16 V

On resistance (maximum) for different Ids and Vgs

170 mΩ @ 1A,4.5V

Power dissipation (maximum)

500mW(Ta)

Vgs (max)

±8V

Vgs (th) (maximum) for different Ids

1V @ 250µA

packing

series

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

X1-DFN1006-3

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

DMN2250UFB-7B（MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory10161,Price reference "real-time change" China/Hongkong。 DMN2250UFB-7B package/specs, Download DMN2250UFB-7B、Datasheet。