MOSFET N-CH 115V 3.4A 6DFN DMT12H090LFDF4-13
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Description:
MOSFET N-CH 115V 3.4A 6DFN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMT12H090LFDF4-13(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory32785,Price reference "real-time change" China/Hongkong。 DMT12H090LFDF4-13 package/specs, Download DMT12H090LFDF4-13、Datasheet。