MOSFET BVDSS: 61V~100V V-DFN3333 DMT10H009SCG-13
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Description:
MOSFET BVDSS: 61V~100V V-DFN3333
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMT10H009SCG-13(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory42903,Price reference "real-time change" China/Hongkong。 DMT10H009SCG-13 package/specs, Download DMT10H009SCG-13、Datasheet。