MOSFET BVDSS: 61V~100V POWERDI33 DMTH8008SFGQ-7
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Description:
MOSFET BVDSS: 61V~100V POWERDI33
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMTH8008SFGQ-7(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory67734,Price reference "real-time change" China/Hongkong。 DMTH8008SFGQ-7 package/specs, Download DMTH8008SFGQ-7、Datasheet。