MOSFET BVDSS: 101V~250V POWERDI5 DMT12H7M9SPSW-13
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Description:
MOSFET BVDSS: 101V~250V POWERDI5
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMT12H7M9SPSW-13(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory30083,Price reference "real-time change" China/Hongkong。 DMT12H7M9SPSW-13 package/specs, Download DMT12H7M9SPSW-13、Datasheet。