MOSFET N-CH 100V 84A TO251 DMT10H009LH3
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Description:
MOSFET N-CH 100V 84A TO251
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMT10H009LH3(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory50289,Price reference "real-time change" China/Hongkong。 DMT10H009LH3 package/specs, Download DMT10H009LH3、Datasheet。