MOSFET BVDSS: 501V~650V ITO-220A DMJ65H430SCTI
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Description:
MOSFET BVDSS: 501V~650V ITO-220A
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMJ65H430SCTI(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory66255,Price reference "real-time change" China/Hongkong。 DMJ65H430SCTI package/specs, Download DMJ65H430SCTI、Datasheet。