MOSFET N-CH 60V 2.8A SOT26 ZXMN6A08E6TC
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Description:
MOSFET N-CH 60V 2.8A SOT26
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
ZXMN6A08E6TC(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory18402,Price reference "real-time change" China/Hongkong。 ZXMN6A08E6TC package/specs, Download ZXMN6A08E6TC、Datasheet。