MOSFET N CH 650V 4A TO220-3 DMG4N65CT
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Description:
MOSFET N CH 650V 4A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMG4N65CT(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory58510,Price reference "real-time change" China/Hongkong。 DMG4N65CT package/specs, Download DMG4N65CT、Datasheet。