DMN26D0UFB4-7B parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ MOSFET/ DMN26D0UFB4-7B

The pictures are for reference only

Brand:

Diodes

Model:

DMN26D0UFB4-7B

Description:

DIODE

Stock:

25406

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：13794459602(Wechat)

Q Q：3469113929

Email：3469113929@qq.com

Parameters

Current at 25 ° C - continuous drain (Id)

240mA(Ta)

Drain source voltage (Vdss)

20 V

Drive voltage (maximum RdsOn, minimum RdsOn)

1.5V,4.5V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

Input capacitance at different Vds (Ciss) (maximum)

14.1 pF @ 15 V

On resistance (maximum) for different Ids and Vgs

3 Ω @ 100mA,4.5V

Power dissipation (maximum)

350mW(Ta)

Vgs (max)

±10V

Vgs (th) (maximum) for different Ids

900mV @ 250µA

packing

bulk

series

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

X2-DFN1006-3

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

DMN26D0UFB4-7B（MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory25406,Price reference "real-time change" China/Hongkong。 DMN26D0UFB4-7B package/specs, Download DMN26D0UFB4-7B、Datasheet。