2N7002T-7-F-79 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Diodes

Model:

2N7002T-7-F-79

Description:

DIODE

Stock:

90811

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

115mA(Ta)

Drain source voltage (Vdss)

60 V

Drive voltage (maximum RdsOn, minimum RdsOn)

5V,10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

Input capacitance at different Vds (Ciss) (maximum)

50 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

7.5 Ω @ 50mA,5V

Power dissipation (maximum)

150mW(Ta)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

2V @ 250µA

packing

bulk

series

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

SOT-523

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

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2N7002T-7-F-79（MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory90811,Price reference "real-time change" China/Hongkong。 2N7002T-7-F-79 package/specs, Download 2N7002T-7-F-79、Datasheet。