MOSFET N CH 600V 9.7A DPAK TK10P60W,RVQ
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Description:
MOSFET N CH 600V 9.7A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK10P60W,RVQ(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory91734,Price reference "real-time change" China/Hongkong。 TK10P60W,RVQ package/specs, Download TK10P60W,RVQ、Datasheet。