MOSFET P-CHANNEL 12V 4.8A ES6 SSM6J216FE,LF
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Description:
MOSFET P-CHANNEL 12V 4.8A ES6
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SSM6J216FE,LF(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory64849,Price reference "real-time change" China/Hongkong。 SSM6J216FE,LF package/specs, Download SSM6J216FE,LF、Datasheet。