MOSFET N-CH 40V 120A 8DSOP TPW1R104PB,L1XHQ
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Description:
MOSFET N-CH 40V 120A 8DSOP
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TPW1R104PB,L1XHQ(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory8663,Price reference "real-time change" China/Hongkong。 TPW1R104PB,L1XHQ package/specs, Download TPW1R104PB,L1XHQ、Datasheet。