SSM3J378R,LF parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Toshiba

Model:

SSM3J378R,LF

Description:

MOSFET P-CH 20V 6A SOT23F

Stock:

61148

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.07

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Parameters

Current at 25 ° C - continuous drain (Id)

6A(Ta)

Drain source voltage (Vdss)

20 V

Drive voltage (maximum RdsOn, minimum RdsOn)

1.5V,4.5V

FET Type

P channels

FET function

Gate charge (Qg) at different Vgs (maximum)

12.8 nC @ 4.5 V

Input capacitance at different Vds (Ciss) (maximum)

840 pF @ 10 V

On resistance (maximum) for different Ids and Vgs

29.8 mΩ @ 3A,4.5V

Power dissipation (maximum)

1W(Ta)

Vgs (max)

+6V,-8V

Vgs (th) (maximum) for different Ids

1V @ 1mA

packing

TR,CT

series

U-MOSVI

technology

MOSFET(Metal oxide)

working temperature

150°C

Encapsulation/Housing

SOT-23F

Country of origin

Japan

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

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SSM3J378R,LF（MOSFET）ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory61148,Price reference "real-time change" China/Hongkong。 SSM3J378R,LF package/specs, Download SSM3J378R,LF、Datasheet。