MOSFET N-CH 60V 80A TO220 TK4R3E06PL,S1X
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Description:
MOSFET N-CH 60V 80A TO220
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK4R3E06PL,S1X(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory67680,Price reference "real-time change" China/Hongkong。 TK4R3E06PL,S1X package/specs, Download TK4R3E06PL,S1X、Datasheet。