MOSFET N-CH 500V 4.8A SOT223 IPN50R1K4CEATMA1
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Description:
MOSFET N-CH 500V 4.8A SOT223
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPN50R1K4CEATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory14671,Price reference "real-time change" China/Hongkong。 IPN50R1K4CEATMA1 package/specs, Download IPN50R1K4CEATMA1、Datasheet。