MOSFET N CH 100V 52A TO220 TK22E10N1,S1X
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Description:
MOSFET N CH 100V 52A TO220
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK22E10N1,S1X(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory71836,Price reference "real-time change" China/Hongkong。 TK22E10N1,S1X package/specs, Download TK22E10N1,S1X、Datasheet。