MOSFET N-CH 900V 2.5A TO220SIS 2SK3566(STA4,Q,M)
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Description:
MOSFET N-CH 900V 2.5A TO220SIS
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
2SK3566(STA4,Q,M)(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory49274,Price reference "real-time change" China/Hongkong。 2SK3566(STA4,Q,M) package/specs, Download 2SK3566(STA4,Q,M)、Datasheet。