MOSFET N-CH 60V 58A TO220 TK58E06N1,S1X
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Description:
MOSFET N-CH 60V 58A TO220
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK58E06N1,S1X(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory68824,Price reference "real-time change" China/Hongkong。 TK58E06N1,S1X package/specs, Download TK58E06N1,S1X、Datasheet。