MOSFET N-CH 800V 11.5A TO220 TK12E80W,S1X
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Description:
MOSFET N-CH 800V 11.5A TO220
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK12E80W,S1X(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory55446,Price reference "real-time change" China/Hongkong。 TK12E80W,S1X package/specs, Download TK12E80W,S1X、Datasheet。