MOSFET N CH 600V 11.5A DPAK TK12P60W,RVQ
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Description:
MOSFET N CH 600V 11.5A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK12P60W,RVQ(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory98640,Price reference "real-time change" China/Hongkong。 TK12P60W,RVQ package/specs, Download TK12P60W,RVQ、Datasheet。