MOSFET N-CH 600V 2.5A TO220SIS TK3A60DA(STA4,Q,M)
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Description:
MOSFET N-CH 600V 2.5A TO220SIS
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK3A60DA(STA4,Q,M)(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory34576,Price reference "real-time change" China/Hongkong。 TK3A60DA(STA4,Q,M) package/specs, Download TK3A60DA(STA4,Q,M)、Datasheet。