MOSFET N-CH 500V 18A TO220SIS TK18A50D(STA4,Q,M)
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Description:
MOSFET N-CH 500V 18A TO220SIS
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK18A50D(STA4,Q,M)(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory90011,Price reference "real-time change" China/Hongkong。 TK18A50D(STA4,Q,M) package/specs, Download TK18A50D(STA4,Q,M)、Datasheet。