TPC8A05-H(TE12L,QM parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ MOSFET/ TPC8A05-H(TE12L,QM

The pictures are for reference only

Brand:

Toshiba

Model:

TPC8A05-H(TE12L,QM

Description:

MOSFET N-CH 30V 10A 8SOP

Stock:

71926

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：13794459602(Wechat)

Q Q：3469113929

Email：3469113929@qq.com

Parameters

Current at 25 ° C - continuous drain (Id)

10A(Ta)

Drain source voltage (Vdss)

30 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,10V

FET Type

N channels

FET function

Schottky diode

Gate charge (Qg) at different Vgs (maximum)

15 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

1700 pF @ 10 V

On resistance (maximum) for different Ids and Vgs

13.3 mΩ @ 5A,10V

Power dissipation (maximum)

1W(Ta)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

2.3V @ 1mA

packing

series

U-MOSV-H

technology

MOSFET(Metal oxide)

working temperature

150°C(TJ)

Encapsulation/Housing

8-SOP(5.5x6.0)

Country of origin

Japan

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

TPC8A05-H(TE12L,QM（MOSFET）ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory71926,Price reference "real-time change" China/Hongkong。 TPC8A05-H(TE12L,QM package/specs, Download TPC8A05-H(TE12L,QM、Datasheet。