TK40J20D,S1F(O parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ MOSFET/ TK40J20D,S1F(O

The pictures are for reference only

Brand:

Toshiba

Model:

TK40J20D,S1F(O

Description:

MOSFET N-CH 200V 40A TO3P

Stock:

15606

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

40A(Ta)

Drain source voltage (Vdss)

200 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

100 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

4300 pF @ 100 V

On resistance (maximum) for different Ids and Vgs

44 mΩ @ 20A,10V

Power dissipation (maximum)

260W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

3.5V @ 1mA

packing

pallet

series

π-MOSVIII

technology

MOSFET(Metal oxide)

working temperature

150°C

Encapsulation/Housing

TO-3P(N)

Country of origin

Japan

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

On sale

DataSheet

SearchTK40J20D,S1F(O

TK40J20D,S1F(O（MOSFET）ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory15606,Price reference "real-time change" China/Hongkong。 TK40J20D,S1F(O package/specs, Download TK40J20D,S1F(O、Datasheet。