MOSFET P-CH 20V 630MA SOT323-3 BSS209PWH6327XTSA1
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Description:
MOSFET P-CH 20V 630MA SOT323-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
BSS209PWH6327XTSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory23393,Price reference "real-time change" China/Hongkong。 BSS209PWH6327XTSA1 package/specs, Download BSS209PWH6327XTSA1、Datasheet。