MOSFET P-CH 60V 180MA SOT23-3 ISS55EP06LMXTSA1
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Description:
MOSFET P-CH 60V 180MA SOT23-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
ISS55EP06LMXTSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory44479,Price reference "real-time change" China/Hongkong。 ISS55EP06LMXTSA1 package/specs, Download ISS55EP06LMXTSA1、Datasheet。