MOSFET N-CH 40V 23A DPAK NTD5807NT4G
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Description:
MOSFET N-CH 40V 23A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTD5807NT4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory76431,Price reference "real-time change" China/Hongkong。 NTD5807NT4G package/specs, Download NTD5807NT4G、Datasheet。