MOSFET N-CH 150V 21A TO252-3 IPD530N15N3GATMA1
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Description:
MOSFET N-CH 150V 21A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD530N15N3GATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory47261,Price reference "real-time change" China/Hongkong。 IPD530N15N3GATMA1 package/specs, Download IPD530N15N3GATMA1、Datasheet。