MOSFET N-CH 650V 4A IPAK STU6N65M2-S
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Description:
MOSFET N-CH 650V 4A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STU6N65M2-S(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory64989,Price reference "real-time change" China/Hongkong。 STU6N65M2-S package/specs, Download STU6N65M2-S、Datasheet。