MOSFET N-CH 650V 38A TO263-3-2 IPB60R055CFD7ATMA1
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Description:
MOSFET N-CH 650V 38A TO263-3-2
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB60R055CFD7ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory48654,Price reference "real-time change" China/Hongkong。 IPB60R055CFD7ATMA1 package/specs, Download IPB60R055CFD7ATMA1、Datasheet。