MOSFET N-CH 650V 20.7A TO220-3 SPP20N65C3HKSA1
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Description:
MOSFET N-CH 650V 20.7A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SPP20N65C3HKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory91137,Price reference "real-time change" China/Hongkong。 SPP20N65C3HKSA1 package/specs, Download SPP20N65C3HKSA1、Datasheet。