TRENCH >=100V IPP129N10NF2SAKMA1
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Description:
TRENCH >=100V
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPP129N10NF2SAKMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory64073,Price reference "real-time change" China/Hongkong。 IPP129N10NF2SAKMA1 package/specs, Download IPP129N10NF2SAKMA1、Datasheet。