MOSFET N-CH 100V 8A/40A 8TSDSON BSZ160N10NS3GATMA1
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Description:
MOSFET N-CH 100V 8A/40A 8TSDSON
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
BSZ160N10NS3GATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory6544,Price reference "real-time change" China/Hongkong。 BSZ160N10NS3GATMA1 package/specs, Download BSZ160N10NS3GATMA1、Datasheet。