MOSFET N-CH 100V 13A/100A 8PQFN IRFH5010TRPBF
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Description:
MOSFET N-CH 100V 13A/100A 8PQFN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRFH5010TRPBF(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory90011,Price reference "real-time change" China/Hongkong。 IRFH5010TRPBF package/specs, Download IRFH5010TRPBF、Datasheet。