BSZ013NE2LS5IATMA1 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

BSZ013NE2LS5IATMA1

Description:

MOSFET N-CH 25V 32A/40A TSDSON

Stock:

24227

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.44

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Parameters

Current at 25 ° C - continuous drain (Id)

32A(Ta),40A(Tc)

Drain source voltage (Vdss)

25 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

50 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

3400 pF @ 12 V

On resistance (maximum) for different Ids and Vgs

1.3 mΩ @ 20A,10V

Power dissipation (maximum)

2.1W(Ta),69W(Tc)

Vgs (max)

±16V

Vgs (th) (maximum) for different Ids

2V @ 250µA

packing

TR,CT

series

OptiMOS™

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

PG-TSDSON-8-FL

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载BSZ013NE2LS5IATMA1.pdf

BSZ013NE2LS5IATMA1（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory24227,Price reference "real-time change" China/Hongkong。 BSZ013NE2LS5IATMA1 package/specs, Download BSZ013NE2LS5IATMA1、Datasheet。