IPD25N06S4L30ATMA2 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IPD25N06S4L30ATMA2

Description:

MOSFET N-CH 60V 25A TO252-31

Stock:

28422

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.05

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Parameters

Current at 25 ° C - continuous drain (Id)

25A(Tc)

Drain source voltage (Vdss)

60 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

16.3 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

1220 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

30 mΩ @ 25A,10V

Power dissipation (maximum)

29W(Tc)

Vgs (max)

±16V

Vgs (th) (maximum) for different Ids

2.2V @ 8µA

packing

TR,CT,bulk

series

Automotive, AEC-Q101, OptiMOS™

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

PG-TO252-3-11

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载IPD25N06S4L30ATMA2.pdf

IPD25N06S4L30ATMA2（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory28422,Price reference "real-time change" China/Hongkong。 IPD25N06S4L30ATMA2 package/specs, Download IPD25N06S4L30ATMA2、Datasheet。