MOSFET N-CH 60V 180A TO263-7 IPB017N06N3GATMA1
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Description:
MOSFET N-CH 60V 180A TO263-7
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB017N06N3GATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory4065,Price reference "real-time change" China/Hongkong。 IPB017N06N3GATMA1 package/specs, Download IPB017N06N3GATMA1、Datasheet。