T8 60V LOW COSS NVMFS5H610NLT1G
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Description:
T8 60V LOW COSS
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NVMFS5H610NLT1G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory46505,Price reference "real-time change" China/Hongkong。 NVMFS5H610NLT1G package/specs, Download NVMFS5H610NLT1G、Datasheet。