MOSFET N-CH 100V 3.2A/20A 8PQFN IRFHM3911TRPBF
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Description:
MOSFET N-CH 100V 3.2A/20A 8PQFN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRFHM3911TRPBF(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory24529,Price reference "real-time change" China/Hongkong。 IRFHM3911TRPBF package/specs, Download IRFHM3911TRPBF、Datasheet。