MOSFET N-CH 500V 9A SOT223 IPN50R650CEATMA1
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Description:
MOSFET N-CH 500V 9A SOT223
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPN50R650CEATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory86493,Price reference "real-time change" China/Hongkong。 IPN50R650CEATMA1 package/specs, Download IPN50R650CEATMA1、Datasheet。