MOSFET N-CH 120V 56A D2PAK IPB144N12N3GATMA1
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Description:
MOSFET N-CH 120V 56A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB144N12N3GATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory14112,Price reference "real-time change" China/Hongkong。 IPB144N12N3GATMA1 package/specs, Download IPB144N12N3GATMA1、Datasheet。