MOSFET N-CH 100V 58A D2PAK IPB123N10N3GATMA1
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Description:
MOSFET N-CH 100V 58A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB123N10N3GATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory27434,Price reference "real-time change" China/Hongkong。 IPB123N10N3GATMA1 package/specs, Download IPB123N10N3GATMA1、Datasheet。