MOSFET P-CH 30V 9A/39.6A TSDSON BSZ180P03NS3GATMA1
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Description:
MOSFET P-CH 30V 9A/39.6A TSDSON
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
BSZ180P03NS3GATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory80110,Price reference "real-time change" China/Hongkong。 BSZ180P03NS3GATMA1 package/specs, Download BSZ180P03NS3GATMA1、Datasheet。