MOSFET N-CH 100V 50A TO252-3 IPD50N10S3L16ATMA1
The pictures are for reference only
Description:
MOSFET N-CH 100V 50A TO252-3
The market price fluctuates. Please consult the customer service for the actual price
Contact Us
Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD50N10S3L16ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory24297,Price reference "real-time change" China/Hongkong。 IPD50N10S3L16ATMA1 package/specs, Download IPD50N10S3L16ATMA1、Datasheet。