MOSFET N-CH 650V 9A TO262-3 IPI60R385CPXKSA1
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Description:
MOSFET N-CH 650V 9A TO262-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPI60R385CPXKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory37548,Price reference "real-time change" China/Hongkong。 IPI60R385CPXKSA1 package/specs, Download IPI60R385CPXKSA1、Datasheet。