MOSFET N-CH 800V 3.9A TO220 IPA80R1K4CEXKSA2
The pictures are for reference only
Description:
MOSFET N-CH 800V 3.9A TO220
The market price fluctuates. Please consult the customer service for the actual price
Contact Us
Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPA80R1K4CEXKSA2(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory63890,Price reference "real-time change" China/Hongkong。 IPA80R1K4CEXKSA2 package/specs, Download IPA80R1K4CEXKSA2、Datasheet。