IPB80N04S303ATMA1 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IPB80N04S303ATMA1

Description:

MOSFET N-CH 40V 80A TO263-3

Stock:

91514

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.35

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Parameters

Current at 25 ° C - continuous drain (Id)

80A(Tc)

Drain source voltage (Vdss)

40 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

110 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

7300 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

3.2 mΩ @ 80A,10V

Power dissipation (maximum)

188W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4V @ 120µA

packing

TR,CT

series

OptiMOS™

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

PG-TO263-3-2

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

Not applicable to new design

DataSheet

IPB80N04S303ATMA1（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory91514,Price reference "real-time change" China/Hongkong。 IPB80N04S303ATMA1 package/specs, Download IPB80N04S303ATMA1、Datasheet。