MOSFET N-CH 560V 21A TO263-3 SPB21N50C3ATMA1
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Description:
MOSFET N-CH 560V 21A TO263-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
SPB21N50C3ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory14191,Price reference "real-time change" China/Hongkong。 SPB21N50C3ATMA1 package/specs, Download SPB21N50C3ATMA1、Datasheet。